Simulation of fluorocarbon plasma etching of SiO2 structures

摘要: A surface model for open area etching of SiO2 is coupled with a to calculate the local values rate on each elementary structure being etched. The includes chemistry ion-enhanced or deposition. (essentially flux calculation model) shadowing effects ions/neutrals and re-emission, while charging are simulated only by an increased ion angular spread. Aspect ratio dependent independent as well transition from deposition predicted studied function plasma phase composition. Variations yield versus aspect can be graphically depicted paths two dimensional plot equal contours normalised fluorine carbonaceous radicals flux. Operation regimes allowing minimisation phenomena easily identified such graphical representation.