Evolution of InAs quantum dot shape on GaAs(1¯1¯4¯)B
作者： M.C. Xu , Y. Temko , T. Suzuki , K. Jacobi
DOI: 10.1016/J.SUSC.2004.12.012
关键词:
摘要: Abstract InAs quantum dots (QDs) were grown by molecular beam epitaxy on GaAs ( 1 ¯ 4 ) B surfaces and studied in situ scanning tunneling microscopy (STM). Atomically resolved STM images, obtained for the QDs of different size, reveal that exhibit shapes at stages evolution. First, small islands develop composed mainly flat { 3 5 } 2 facets. Next, steeper 11 A facets form Then a remarkable shape transition occurs with aspect ratio increasing from 0.10 to 0.20. The grow height now stacking layers so new, steep 0 appear side top shrink finally vanish. mature QD is terminated five besides base. Further growth results an elongation along symmetry direction.
harvard.edu
mpg.de
elsevier.com
sci-hub.se 参考文章(19)
D Bimberg, M Grundmann, D, NN Ledentsov, Quantum dot heterostructures ,(1999)
Marius Grundmann, Nano-Optoelectronics : concepts, physics and devices Springer-Verlag. ,(2002)
Peter Geng, Juan Márquez, Lutz Geelhaar, Jutta Platen, Carsten Setzer, Karl Jacobi, A compact ultrahigh-vacuum system for the in situ investigation of III/V semiconductor surfaces Review of Scientific Instruments. ,vol. 71, pp. 504- 508 ,(2000) , 10.1063/1.1150232
Hideaki Saito, Kenichi Nishi, Shigeo Sugou, Shape transition of InAs quantum dots by growth at high temperature Applied Physics Letters. ,vol. 74, pp. 1224- 1226 ,(1999) , 10.1063/1.123506
K. Jacobi, Atomic structure of InAs quantum dots on GaAs Progress in Surface Science. ,vol. 71, pp. 185- 215 ,(2003) , 10.1016/S0079-6816(03)00007-8
T. Suzuki, Y. Temko, M.C. Xu, K. Jacobi, Surface morphology and structure of the bare and InAs-covered GaAs(-3-1-5)B surface Surface Science. ,vol. 548, pp. 333- 341 ,(2004) , 10.1016/J.SUSC.2003.11.011
T. Suzuki, Y. Temko, M. C. Xu, K. Jacobi, Lattice defects in InAs quantum dots on the GaAs(-3-1-5)B surface Physical Review B. ,vol. 69, pp. 235302–1- 235302–6 ,(2004) , 10.1103/PHYSREVB.69.235302
Frances M Ross, RM Tromp, MC Reuter, Transition States Between Pyramids and Domes During Ge/Si Island Growth Science. ,vol. 286, pp. 1931- 1934 ,(1999) , 10.1126/SCIENCE.286.5446.1931
M. C. Xu, Y. Temko, T. Suzuki, K. Jacobi, Mature InAs quantum dots on the GaAs(114)A surface Applied Physics Letters. ,vol. 84, pp. 2283- 2285 ,(2004) , 10.1063/1.1691196
Y. Temko, T. Suzuki, K. Jacobi, Shape and growth of InAs quantum dots on GaAs(113)A Applied Physics Letters. ,vol. 82, pp. 2142- 2144 ,(2003) , 10.1063/1.1563738