Location of quantum dots identified by microscopic photoluminescence changes during nanoprobe indentation with a horizontal scan

摘要: The location of quantum dots (QDs) embedded in a GaAs matrix is successfully identified by microscopic photoluminescence (PL) measurement during nanoprobe indentation with horizontal scan at low temperature $(10\phantom{\rule{0.3em}{0ex}}\mathrm{K})$. By introducing high-sensitive load cell and focused ion beam-fabricated flat-apex nanoprobe, the force PL QDs are measured simultaneously each point direction scanning constant force. experimental results show that emission energy from has strong dependence on relative to nanoprobe-indented location. Consequently, shifts scan, generating an trace Based shift ground state QD simulated combination three-dimensional finite element strain calculation strain-dependent $\mathbf{k}\mathbf{∙}\mathbf{p}$ Hamiltonian, estimation method developed, which enables us identify its experiment. Results indicate all traces clearly observed emitted around edge area. Further discussion reveals evolution shear generates hole accumulation contact indented nanoprobe. high density holes enhances region.