Hollow cathode plasma assisted chemical vapor deposition of diamond
作者： B. Singh , O. R. Mesker , A. W. Levine , Y. Arie
DOI: 10.1063/1.99049
关键词:
摘要: A method which combines thermal and plasma dissociation of a methane/hydrogen gas mixture for low‐pressure chemical vapor deposition diamond is described. hot, thin‐walled, refractory metal cathode used to generate high‐current, low‐voltage discharge. The substrates are located on the anode immersed in emanating from tip. No auxiliary substrate heating employed. Polycrystalline particles films obtained silicon (100) molybdenum at growth rates 1–3 μm/h.
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sci-hub.se 参考文章(6)
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