Stability of Electrical Characteristics of MOS Structures Based on Gallium Oxide
作者： V. M. Kalygina , Yu. S. Petrova , I. A. Prudaev , O. P. Tolbanov
DOI: 10.1007/S11182-016-0833-5
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摘要: … gallium arsenide with the donor concentration Nd = 2·1016 cm–3. The 100–150 nm thick gallium oxide … VUP-4 by sputtering of the gallium oxide powder. A more detailed description of …
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