The influence of anodic oxide on the electron concentration in n-GaAs
作者： V. M. Kalygina , V. V. Vishnikina , А. N. Zarubin , Yu. S. Petrova , М. S. Skakunov
DOI: 10.1007/S11182-014-0129-6
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摘要: The influence of anodic oxide on the electron concentration near Ga2O3–n-GaAs interface is studied. coordinate distribution electrons obtained as a function anodizing voltage, duration treatment films in oxygen plasma, temperature, and annealing time. A decrease semiconductor after deposition accounted for by appearance Ga vacancies which act acceptors gallium arsenide.
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