Anodic-oxide-induced interdiffusion in GaAs/AlGaAs quantum wells
作者： Shu Yuan , Yong Kim , H. H. Tan , C. Jagadish , P. T. Burke
DOI: 10.1063/1.366830
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摘要: Enhancement of interdiffusion in GaAs/AlGaAs quantum wells due to anodic oxides was studied. Photoluminescence, transmission electron microscopy, and well modeling were used understand the effects intermixing on shape. Residual water oxide found increase intermixing, though it not prime cause for intermixing. Injection defects such as group III vacancies or interstitials considered be a driving force Different current densities experimental range create had little effect
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