INFLUENCE OF OXYGEN ON THE PERFORMANCE OF GAAS/ALGAAS QUANTUM WELL INFRARED PHOTODETECTORS
作者： K. L. Tsai , C. P. Lee , K. H. Chang , H. R. Chen , J. S. Tsang
DOI: 10.1063/1.358439
关键词: Molecular beam epitaxy 、 Oxygen 、 Photoluminescence 、 Dark current 、 Optoelectronics 、 Quantum well infrared photodetector 、 Quantum well 、 Superlattice 、 Chemistry 、 Responsivity
摘要: The influence of oxygen on the performance GaAs/AlGaAs quantum well infrared photodetectors (QWIP) has been studied. Photoluminescence and secondary ion mass spectroscopy were used to examine relationship between quality AlGaAs content that then correlated QWIPs. It was found is dominant impurity in superlattice. Because atoms behave likes electron traps, which effectively reduce carrier concentration material, both responsivity dark current QWIP are reduced. detectivities QWIPs with lower concentrations better than those higher concentrations.
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