The effect of substrate temperature on the current threshold of GaAs‐AlxGa1−xAs double‐heterostructure lasers grown by molecular beam epitaxy
作者： W. T. Tsang , F. K. Reinhart , J. A. Ditzenberger
DOI: 10.1063/1.91400
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摘要: The current threshold densities (Jth) of broad‐area double‐heterostructure (DH) lasers, the photoluminescence (PL) intensities p‐GaAs cap layers, P‐AlxGa1−xAs (x∼0.3) confinement and GaAs active layers DH wafers are investigated as a function substrate temperature (450–650 °C) during MBE growth. PL increase Jth’s lasers decrease with increasing temperature. improvement Jth is found to be well correlated optical qualities AlxGa1−xAs However, relatively independent
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