Effects of pulsed anodic oxide on the intermixing in InGaAs/GaAs and InGaAs/AlGaAs quantum wells
作者： Shu Yuan , C. Y. Liu , F. Zhao , M. C. Y. Chan , W. K. Tsui
DOI: 10.1063/1.1577407
关键词:
摘要: Intermixing in InGaAs/GaAs and InGaAs/AlGaAs quantum well structures after rapid thermal annealing with without an anodic oxide cap on the surface was studied by low temperature (8 K) photoluminescence (PL). The PL peak energy shifted towards higher photon energies (blueshift) both types of samples, especially at temperatures above 880 °C. has been demonstrated to inhibit band-gap blueshift structures. Secondary ion mass spectroscopy data indicated that Ga vacancies were injected from into epitaxial layers. These enhanced interdiffusion between group III atoms, partially relaxed strain structure, resulting effect suppression blueshift.
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