Contact plug structure and method for preparing the same
作者： Hsueh Che
DOI:
关键词:
摘要: A contact plug structure for a checkerboard dynamic random access memory comprises body portion, two leg portions connected to the portion and dielectric block positioned between portions. Each is electrically deep trench capacitor arranged in an S-shape manner with respect via doped region isolated by shallow isolation structure. Preferably, can be made of same conductive material selected from group consisting polysilicon, tungsten, copper aluminum, while borophosphosilicate glass. Particularly, prepared dual-damascene technique. Since overlapped area word line dramatically decreased, bit coupling (BLC) effectively reduced.
lens.org 参考文章(7)
Byung-keun Hwang, Ju-seon Goo, Ji-Hyun Choi, Hae-Jeong Lee, Multiple etch methods for forming contact holes in microelectronic devices including SOG layers and capping layers thereon ,(1997)
Dragan V. Podlesnik, Sanjay Thekdi, Anisul Khan, Ajay Kumar, Process for in-situ etching a hardmask stack ,(2002)
Yoshimitsu Ishikawa, Method for Cu metallization of highly reliable dual damascene structures ,(2005)
Jason Taylor, Daniel Smith, Sanh D. Tang, Semiconductor devices having contact plugs and local interconnects and methods for making the same ,(2003)
Basab Bandyopadhyay, H. Jim Fulford, William S. Brennan, Mark W. Michael, Robert Dawson, Fred N. Hause, Integrated circuit having local interconnect for reduing signal cross coupled noise ,(1996)
Jason Taylor, Daniel Smith, Sanh D. Tang, Method for making semiconductor devices having contact plugs and local interconnects ,(2001)
Dominik Olligs, Nicolas Nagel, Method of forming a contact in a flash memory device ,(2005)