Method of forming a contact in a flash memory device
作者： Dominik Olligs , Nicolas Nagel
DOI:
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摘要: A method of forming a contact between bitline and local interconnect in flash memory device comprises hard mask layer on planarized surface that includes an exposed top section the interconnects prior to depositing oxide dielectric layer. The may be composed material has etch resistance as compared interlayer material, e.g., nitride. Openings define positions for contacts section.
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