Semiconductor memory with reed-solomon decoder
作者： Haruki Toda
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摘要: A semiconductor memory device such as a flash with cell array and double-error correcting Reed-Solomon decoder, comprising: means for transforming the error location polynomial through variable transformation in order to obtain unique coefficient depending on syndromes; lookup table determining locations from coefficient; said syndromes computation Residue Number System achieve parallel processing reduce quantity of computations, example using residues 15 17 when GF (256)
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