Simultaneous function dynamic random access memory device technique

摘要: A simultaneous function dynamic random access memory (“DRAM”) technique of particular applicability to DRAMs, synchronous DRAMs (“SDRAM”), specialty embedded SDRAMs and the like which enables execution “read”, “write”, “active” “precharge” commands on a single clock cycle. The present invention is especial arrays or where number input signals DRAM are not necessarily limited by mechanical component packaging constraints pin counts. In general, advantages obtained through use separate address fields, including bank addresses, for “read” “write” commands, addresses with resultant highly parallel operational functionality.