作者: X.F. Liu , W.M. Gong , Javed Iqbal , B. He , R.H. Yu
DOI: 10.1016/J.TSF.2009.05.008
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摘要: Abstract Co-doped SnO 2 insulating films with different crystal quality were fabricated using magnetron sputtering. X-ray photoelectron spectroscopy and absorption near-edge structure spectrum reveal a solid solution of Co dopants in lattice, where is 2+ oxidation state substitutes for Sn 4+ . The as-grown crystallinity exhibit clearly room-temperature ferromagnetism, the more structural defects show higher saturated magnetic moment. With increase annealing time, improved decrease, leading to decrease or disappearance ferromagnetism films. results that intrinsic can be considerably influenced by concentration defects.