Optical, electrical and morphological properties of p-type Mn-doped SnO 2 nanostructured thin films prepared by sol–gel process

摘要: SnO2 thin films doped with various manganese concentrations were prepared on glass substrates by sol–gel dip coating method. The decomposition procedure of compounds produced alcoholysis reactions tin and chlorides was studied thermogravimetric analysis (TGA). effects Mn doping structural, morphological, electrical optical properties characterized X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force (AFM), Hall effect measurement, Fourier Transform Infrared (FTIR) spectral analysis, UV–Vis spectrophotometry, photoluminescence (PL) spectroscopy. results the show that samples are crystalline a tetragonal rutile structure grain size decreases increasing concentration. SEM AFM images demonstrate surface morphology affected from incorporation. Sn1−xMnxO2 exhibited electrically p-type behavior in level above x=0.035 resistivity increases increase doping. transmission spectra shift position absorption edge towards higher wavelength (lower energy). constants (refractive index extinction coefficient) film thickness determined transmittance using numerical approximation oscillator dispersion energies calculated Wemple–DiDomenico model. estimated band gap is found to decrease room-temperature PL measurements illustrate intensity emission lines when content increased Mn-doped films.