Fabrication of p-type conductivity in SnO2 thin films through Ga doping

作者: Chien-Yie Tsay , Shan-Chien Liang

DOI: 10.1016/J.JALLCOM.2014.10.003

关键词:

摘要: … insufficient to switch the conductivity type from n-type to p-type. It is found that the semiconducting nature of the SnO 2 :Ga thin films changed from n-type to p-type when the Ga doping …

参考文章(40)
I. Volintiru, M. Creatore, B. J. Kniknie, C. I. M. A. Spee, M. C. M. van de Sanden, Evolution of the electrical and structural properties during the growth of Al doped ZnO films by remote plasma-enhanced metalorganic chemical vapor deposition Journal of Applied Physics. ,vol. 102, pp. 043709- ,(2007) , 10.1063/1.2772569
Abhishek Kumar Singh, Anderson Janotti, Matthias Scheffler, Chris G. Van de Walle, Sources of electrical conductivity in SnO2. Physical Review Letters. ,vol. 101, pp. 055502- ,(2008) , 10.1103/PHYSREVLETT.101.055502
Soo Young Kim, Jong-Lam Lee, Ki-Beom Kim, Yoon-Heung Tak, Effect of ultraviolet-ozone treatment of indium-tin-oxide on electrical properties of organic light emitting diodes Journal of Applied Physics. ,vol. 95, pp. 2560- 2563 ,(2004) , 10.1063/1.1635995
Funda Aksoy Akgul, Cebrail Gumus, Ali O. Er, Ashraf H. Farha, Guvenc Akgul, Yuksel Ufuktepe, Zhi Liu, Structural and electronic properties of SnO2 Journal of Alloys and Compounds. ,vol. 579, pp. 50- 56 ,(2013) , 10.1016/J.JALLCOM.2013.05.057
L. G. Wang, Alex Zunger, Cluster-doping approach for wide-gap semiconductors: the case of p-type ZnO. Physical Review Letters. ,vol. 90, pp. 256401- ,(2003) , 10.1103/PHYSREVLETT.90.256401
Robert M. Pasquarelli, David S. Ginley, Ryan O'Hayre, Solution processing of transparent conductors: from flask to film Chemical Society Reviews. ,vol. 40, pp. 5406- 5441 ,(2011) , 10.1039/C1CS15065K
Sk. F. Ahmed, S. Khan, P. K. Ghosh, M. K. Mitra, K. K. Chattopadhyay, Effect of Al doping on the conductivity type inversion and electro-optical properties of SnO2 thin films synthesized by sol-gel technique Journal of Sol-Gel Science and Technology. ,vol. 39, pp. 241- 247 ,(2006) , 10.1007/S10971-006-7808-X