Rectifying characteristics and bipolar resistance switching behaviors in sol–gel processed TiOx thin film
作者： Jang-Han Kim , Ki-Hyun Nam , Won-Ju Cho , Hong-Bay Chung
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摘要: We demonstrate a sol–gel processed Ti/TiOx/Pt device for rectifying characteristics as well resistive switching. In the rectification mode, exhibited forward current density (>102 A/cm2) and on/off ratio (>104) owing to asymmetric Schottky barrier at Ti/TiOx (0.11 eV) TiOx/Pt (0.57 eV). After forming process by applying positive bias, mode of TiOx changed switching mode. case when negative high resistance state (HRS) is dominated emission in low voltage Poole–Frenkel voltage. Contrary HRS whole bias. Different type mechanisms might be attributed oxygen vacancy distribution across active layer.
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