作者: Hermann Nienhaus
DOI: 10.1016/S0167-5729(01)00019-X
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摘要: Abstract Dissipation of chemical energy released in exothermic reactions at metal surfaces may happen adiabatically by creation phonons or non-adiabatically excitation the electronic system reactants. In past decades, only direct experimental evidence for such non-adiabatic has been exoelectron emission into vacuum and surface chemiluminescence which are observed a special class very reactions. The e–h pairs discussed many theoretical models but it was recently that novel approach using Schottky diodes with ultrathin films makes measurement reaction-induced hot electrons holes possible. reaction creates charge carriers travel ballistically from film toward interface detected as chemicurrent diode. By now, currents have during adsorption atomic hydrogen deuterium on Ag, Cu Fe well chemisorption molecular oxygen, NO 2 molecules certain hydrocarbons Ag. This paper reviews briefly experiments concept Norskov–Newns–Lundqvist model. major part is devoted to detection chemically induced thin Si discussing different influences magnitude presenting results predominantly atoms. introduce new method investigate kinetics dynamics use an device. addition, be used selective reactive gas sensors.