Regimes of leakage current in ALD-processed Al2O3 thin-film layers

摘要: A recently known phenomenon of thin oxide layers with thicknesses below approximately 40 nm is the increase in their breakdown electric field, called disruptive strength, towards lower thicknesses. This offers possibility examining current–electric field characteristics at higher strengths without an early breakdown. In this paper, we report on identification a current regime trap-free square law and buildup S-shaped characteristic curve. observation for atomic layer deposition (ALD)-processed Al2O3 has not been mentioned literature so far. Additionally, modern model space charge limited used to fit extract associated parameters, such as mobility, density states, energy band gap between conduction trap state. context, Poole–Frenkel effect neglected our measurements after filled limit.