Application of Amorphous Silicon to WO3Photoelectrochromic Device

摘要: A new optical memory device consisting of a solid-state electrochromic (ECD) and photoconductive amorphous silicon(a-Si) thin film was investigated. The photoelectrochromic structure, i.e. glass/ITO/a-Si/Cr2O3/Cr2O3V2O5/WO3/Au devised in order to record an image with sharp contrast. When the a-Si layer illuminated by He-Ne laser (6328 A) 1.6 mW output power under application D.C. voltage, color WO3 became blue (HxWO3) remained as it after electric field removed. By changing polarity coloration-discoloration cycle could be repeated many times illumination light, response speed corresponding that ECD.