摘要: This paper reports on GaAs resonant microbeams for mass sensing applications. We present a sensor driven by lateral field excitation and given frequency dependent voltage as output. Thanks to an analytical model of piezoelectric excitation, we determine potentially interesting geometries beams quasi extensional or shear modes (110) wafer. The piezoresistive detection time stress can be achieved use p-GaAs gauges connected in bridge circuit. simulator TENSOSIM which is elaborated furnish etching shapes 2D 3D micromechanical structures used derive at any the cross sectional shape micromachined H2SO4:H2O2:H2O solution. Influence misalignment performances evaluated reveals small departures