Analysis of Gibbsian Segregation at Heterophase Cu-MnO Interfaces
作者： Stefan Mogck , Bart J. Kooi , Jeff T. De Hosson
DOI: 10.1023/B:INTS.0000012293.11631.48
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摘要: An alternative methodology to analyze Gibbsian segregation at heterophase interfaces with transmission electron microscopy (TEM) is presented and discussed. In this approach the actual concentration of segregating element in a monolayer interface obtained. This contrast line scans or maps where concentrations determined are convolution profiles probe for general deconvolution problem can not be solved accurately. possible because present uses explicitly information offered by hetero-interfaces. The method tested on indium gallium dissolved Cu matrix between MnO precipitates matrix. occurrence clearly demonstrated terminating parallel {111} Cu/MnO 15 ± 3 at.%, whereas average 3.8 0.4 at.%. Further it was found that effectively blocks towards oxide side interface. On other hand, presence does influence indium. Explanation relies thin spinel type GaxMnyO4, which reduces misfit metal-oxide
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