Deposition of Bi3.15Nd0.85Ti3O12 ferroelectric thin films on 5-inch diameter Si wafers by a modified pulsed laser deposition method

摘要: Abstract 5-inch diameter Bi 3.15 Nd 0.85 Ti 3 O 12 (BNT) ferroelectric thin films were prepared on Si wafers by a modified pulsed laser deposition method, in which two scanning rates and 6-inch target used. The investigation the distribution of film thickness reveals that technique used conjunction with large-diameter can improve uniformity thickness. Especially reasonable setup rate ablating fringe area large has prominent effect weakening edge deviation distribution. Such phenomenon was fundamentally explained simulation results ablation tracks beam target. Through optimizing rates, BNT uniform obtained wafer maximum variation found to be less than ± 2.5%. X-ray photoelectron spectroscopy diffraction show great stoichiometry crystallinity. In addition, measurements electrical properties indicated exhibits good property I – V characteristic.