Electromechanical properties of SrBi2Ta2O9 thin films
作者： A. L. Kholkin , K. G. Brooks , N. Setter
DOI: 10.1063/1.119782
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摘要: Weak field piezoelectric coefficient and strain were investigated in ferroelectric SrBi2Ta2O9 (SBT) thin films by means of optical interferometry. Though the maximum polarization dielectric constant small enough (7 μC/cm2 150, respectively), attained 17 pm/V under dc electric field. This value is comparable with coefficients reported previously on poled SBT ceramics. Electrically induced 5⋅10−4 was observed using bipolar driving 300 kV/cm. No fatigue found until 109 switching pulses, agreement data. The properties strains successfully described a simple electrostriction equation effective 0.1 m4/C2. electromechanical behavior suggested no or weak contribution non-180° domain walls to response.
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