Rare-earth doped chalcogenide thin films fabricated by pulsed laser deposition
作者： P.K. Dwivedi , Y.W. Sun , Y.Y. Tsui , D. Tonchev , M. Munzar
DOI: 10.1016/J.APSUSC.2005.03.057
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摘要: Abstract Erbium doped Ge–Ga–Se thin films were fabricated by the pulsed laser deposition (PLD) technique in vacuum using a KrF pulse with λ = 248 nm, and duration of 15 ns. The at room temperature onto glass substrates. morphological, optical thermal properties showed good stability. mechanical including film adhesion are relatively poor for thicker microstructure reveals presence droplets. Annealing improved substantially enhanced efficiency photoluminescence.
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