A Modern Approach to Semiconductor and Vacuum Device Theory

摘要: An integrated approach to the understanding of charge-controlled electronic devices is presented. Although only vacuum triodes and diffusion-type transistors are discussed in detail, methods suggested also applicable gas-filled multi-electrode structures, to surface-barrier drift-type transistors, space-charge-limited solid-state devices. The treatment tutorial nature, begins with development general equations current flow any medium. principles devices are then summarized, a functional relationship between total charge transit time developed. These results applied turn semiconductor diodes derive remarkably simple consistent manner the salient features their operation. 'Ideal' triode transistor structures first discussed, voltage amplification factors introduced as arbitrary parameters account for practical departures from ideality. Specific obtained d.c. characteristics incremental equivalent circuits each device. model established identical hybrid-77 circuit due Giacoletto, both low- high-level injection conditions included. Finally, it suggested that collector saturation open base more fundamental quantity than that emitter, temperature dependence base-emitter shown be linear at level. Throughout, emphasis on involved method approach, particular effort is made present completely analogous manner.