Method for manufacturing a finfet device
作者： Jinbiao Liu , Guilei Wang , Tao Yang , Qing Liu , Yao Wang
DOI:
关键词:
摘要: A method for manufacturing a FinFET device, including providing substrate; implementing source/drain doping on the etching doped substrate to form source region and drain region; forming fin channel between gate Fin channel. The are formed after is implemented substrate, so that done as planar which ensures quality of coping improves property device.
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