Dry-processing apparatus
作者： Ken Ninomiya , Shigeru Nishimatsu , Keizo Suzuki , Sadayuki Okudaira
DOI:
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摘要: In a dry-processing apparatus adapted for vapor phase deposition or etching, the processing space in its chamber is covered with cooled member provided trapping reflecting active particles and preventing degassing, thereby permitting gas of high purity substantially free from impurities. The are incident upon workpiece unidirectional flow. Means uniformalyzing direction movement may be further provided. especially useful vertical etching semiconductor substrate neutral radicals.
lens.org 参考文章(10)
Anderson Gerald S, Moseson Roger M, Method and apparatus for cleansing by ionic bombardment ,(1961)
Yasuhiro Horiike, Gas-etching device ,(1976)
Eugene Wainer, Virgil E. Straughan, Gaseous plasma developing and etching process employing low voltage DC generation ,(1979)
Yoshimi Akai, Masahiko Hirose, Surface treating apparatus utilizing plasma generated by microwave discharge ,(1980)
James M. E. Harper, Harold R. Kaufman, Ion source for reactive ion etching ,(1979)
Gottfried K Wehner, William N Mayer, Method for providing an insulating film on a substrate ,(1963)
Masahiro Shibagaki, Haruo Okano, Katsuo Sumino, Ion etching method ,(1979)
Takashi Itasaka, Tsuneo Yoshida, Plasma processing unit ,(1977)
Kudou Daijirou, Iida Kazuo, METHOD AND DEVICE FOR PLASMA ETCHING ,(1979)
John N Cooper, Jr Eugene C Crittenden, Vacuum deposition apparatus ,(1962)