Single Si nanowire (diameter ≤ 100 nm) based polarization sensitive near-infrared photodetector with ultra-high responsivity

摘要: We report the fabrication and optical response of boron-doped single silicon nanowire-based metal–semiconductor–metal photodetector. Typical nanowire devices with diameter ∼80–100 nm electrode spacing ∼1 μm were made using electron-beam lithography from nanowires, grown by a metal-assisted chemical etching process. A high responsivity, order 104 W−1, was observed even at zero bias in photodetector peak responsivity near-infrared region. The found to increase increasing decreasing diameter. Finite element based simulation proposed explain dependent performance nanowire. photoresponse is sensitive polarization exciting light source, allowing device act as polarization-dependent