作者: Duy P. Tran , Thomas J. Macdonald , Bernhard Wolfrum , Regina Stockmann , Thomas Nann
DOI: 10.1063/1.4904089
关键词:
摘要: Functional silicon nanowires (SiNWs) are promising building blocks in the design of highly sensitive photodetectors and bio-chemical sensors. We systematically investigate photoresponse properties ultrathin SiNWs (20 nm) fabricated using a size-reduction method based on e-beam lithography tetramethylammonium hydroxide wet-etching. The high-quality were able to detect light from UV visible range with excellent sensitivity (∼1 pW/array), good time response, high photoresponsivity (R ∼ 2.5 × 104 A/W). Improvement SiNWs' has been observed comparison 40 nm counter-part nanowires. These attributable predominance surface-effect due surface-to-volume ratio SiNWs. Long-term measurements at different temperatures both forward reverse bias directions demonstrated stability reliability device. By sensitizing SiNW arrays cadmium telluride quantum d...