Full-wave modeling device parasitics of sub-millimeter wave HEMTs
作者： Yasir Karisan , Kubilay Sertel
关键词:
摘要: Extrinsic parasitic couplings of millimeter-wave and submillimeter-wave high electron mobility transistors (HEMTs) are investigated in the context THz integrated circuits. More specifically, a multiple-step HEMT extraction procedure, aimed at improving device performance band, is developed. A distributed circuit model lossy substrate introduced to better approximate propagation attenuation through mesa device. Intrinsic extrinsic effects considered independently clearly identify factors impacting frequency operation. Numerical examples, involving submmW presented illustrate working mechanism proposed characterization technique.
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