Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis

摘要: We present a broadband lumped-element parasitic equivalent circuit to accurately capture the frequency response of electromagnetic (EM) interactions inside structure and surrounding environment high electron-mobility transistors (HEMTs). A new mutual inductance term is included account for high-frequency magnetic field coupling between device electrodes. An analytical method also proposed, first time, extract gate-to-drain $L_{\mathrm {MGD}}$ , which creates an undesirable inductive feedback path from output input at millimeter wavelengths. Based on suggested extrinsic circuit, we propose novel multi-step parameter extraction procedure that utilizes direct analytic linear regression techniques systematically determine component values. The accuracy robustness presented algorithm are established via comprehensive comparisons EM simulations, measurements, responses circuits up beyond 300 GHz in millimeter-wave (mmW) band. key elements most detrimental microwave performance identified optimized through subsequent analysis. Design guidelines provided optimum layout selection achieve highest performance. It demonstrated full-wave simulation based parametric study around 20% improvement maximum oscillation achievable optimization gate finger number unit width.