A new Inter-electrode coupling capacitance extraction method for deep-submicron AlGaN/GaN HEMTs

作者: Xiaodong Zhao , Yuehang Xu , Zhang Wen , Yonghao Jia , Tiedi Zhang

DOI: 10.1587/ELEX.14.20170559

关键词:

摘要:

参考文章(12)
I. Kallfass, D. Schwantuschke, P. Bruckner, M. Seelmann-Eggebert, O. Ambacher, R. Quay, M. Mikulla, A fully scalable compact small-signal modeling approach for 100 nm AlGaN/GaN HEMTs european microwave integrated circuit conference. pp. 284- 287 ,(2013)
Luo Xiaobin, Yu Weihua, Lv Xin, Lv Yuanjie, Dun Shaobo, Feng Zhihong, Equivalent circuit model of millimeter-wave AlGaN/GaN HEMTs IEICE Electronics Express. ,vol. 11, pp. 20140613- 20140613 ,(2014) , 10.1587/ELEX.11.20140613
Andreas Alt, Diego Marti, C.R. Bolognesi, Transistor Modeling: Robust Small-Signal Equivalent Circuit Extraction in Various HEMT Technologies IEEE Microwave Magazine. ,vol. 14, pp. 83- 101 ,(2013) , 10.1109/MMM.2013.2248593
N. Rorsman, M. Garcia, C. Karlsson, H. Zirath, Accurate small-signal modeling of HFET's for millimeter-wave applications IEEE Transactions on Microwave Theory and Techniques. ,vol. 44, pp. 432- 437 ,(1996) , 10.1109/22.486152
A. Jarndal, G. Kompa, A new small-signal modeling approach applied to GaN devices international microwave symposium. ,vol. 53, pp. 3440- 3448 ,(2005) , 10.1109/TMTT.2005.857332
Matthias Rudolph, Christian Fager, David E Root, Nonlinear transistor model parameter extraction techniques Cambridge University Press. ,(2011) , 10.1017/CBO9781139014960
Zhang Wen, Yuehang Xu, Changsi Wang, Xiaodong Zhao, Ruimin Xu, An efficient parameter extraction method for GaN HEMT small‐signal equivalent circuit model International Journal of Numerical Modelling-electronic Networks Devices and Fields. ,vol. 30, ,(2017) , 10.1002/JNM.2127
Yasir Karisan, Cosan Caglayan, Georgios C. Trichopoulos, Kubilay Sertel, Lumped-Element Equivalent-Circuit Modeling of Millimeter-Wave HEMT Parasitics Through Full-Wave Electromagnetic Analysis IEEE Transactions on Microwave Theory and Techniques. ,vol. 64, pp. 1419- 1430 ,(2016) , 10.1109/TMTT.2016.2549520
Mohammad Abdul Alim, Ali A. Rezazadeh, Christophe Gaquiere, Temperature Effect on DC and Equivalent Circuit Parameters of 0.15- $\mu \text{m}$ Gate Length GaN/SiC HEMT for Microwave Applications IEEE Transactions on Microwave Theory and Techniques. ,vol. 64, pp. 3483- 3491 ,(2016) , 10.1109/TMTT.2016.2604815
Xiaodong Zhao, Yuehang Xu, Yonghao Jia, Yunqiu Wu, Ruimin Xu, Jingqiang Li, Zhifu Hu, Hongjiang Wu, Wei Dai, Shujun Cai, Temperature-Dependent Access Resistances in Large-Signal Modeling of Millimeter-Wave AlGaN/GaN HEMTs IEEE Transactions on Microwave Theory and Techniques. ,vol. 65, pp. 2271- 2278 ,(2017) , 10.1109/TMTT.2017.2658561