Triple well charge pump

摘要: An improved charge pump design is disclosed. This comprises at least one pumping transistor having a triple well arrangement. has source and drain region of first conductive type formed on an opposite type. A second the outside well. The region, are set to substantially same potential. One aspect this configuration that forms semiconductor diode with region. Another arrangement body effect reduced. reduction in reduces threshold voltage transistor. It found above mentioned reduction, singly combination, allow operate more efficiently.