Random access memory system utilizing an inverting cell concept

摘要: A non-destructive read MOS memory system associates a different cell of an additional group storage cells with column grouping the two dimensional array. Each stores indications as to number times contents its associated has been selected during or write cycle operation. time is operation, all are inverted and written back into automatically refreshing cells. To provide out correct information utilization device signal representative content within logically combined state status cell. Similarly, ensure that data cell, input signals from column.