Photoluminescence from seeded three-dimensional InAs∕GaAs quantum-dot crystals
作者： S. Kiravittaya , A. Rastelli , O. G. Schmidt
DOI: 10.1063/1.2168494
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摘要: We investigate the photoluminescence (PL) properties of three-dimensional InAs∕GaAs quantum-dot (QD) crystals grown on shallow modulated periodic hole arrays patterned GaAs(001). find that PL spectra become narrower and more intense with increasing number QD layers. A deconvoluted linewidth 14.9 meV is obtained from a defect-free crystal consisting 11 stacked The for containing vacancies show significantly broader spectra. peak energy QDs across whole pattern (100×100μm2) remain constant within 1.278±0.001eV 21.0±1.7meV, respectively. From power-dependent measurement, we can resolve up to seven excited-state peaks confirming remarkable size homogeneity our crystals. This experimental result be reasonably fitted by calculation based random population theory simple model confinement potential.
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