Single photon emitters in dilute nitrides: Towards a determinist approach of quantum dot-photonic crystal nanocavity coupling

摘要: In dilute nitrides [e.g., Ga(AsN), (InGa)(AsN)] the formation of stable N-2H-H complexes following H irradiation removes effects nitrogen has on optical (i.e., refractive index [1]), structural [2], and electronic [3] properties material. particular, binding to N atoms in GaAs 1−x x leads an increase band gap energy N-containing material (∼1.33 eV for = 1% at T 5 K) up value it (1.52 K). Therefore, by allowing incorporation only selected regions sample - e.g., deposition H-opaque masks prior hydrogenation is possible attain a spatially controlled modulation growth plane. This technique, referred as in-plane Band Gap Engineering, can be employed tailor carrier-confining potential down nm scale, resulting fabrication site-controlled, nitride-based quantum dots (QDs). We demonstrate here that such QDs emit single photons demand, revealed measuring second-order correlation function single-exciton emission [4].Coupled possibility erasing/rewriting fabricated patterns through multiple annealing/hydrogenation procedures, inherently precise control over position nanostructures with this method renders them naturally suited integration photonic crystal nanocavities.