Nano-Optoelectronic Integration on Silicon

摘要: Modern silicon technology offers unprecedented spatial and temporal control of electrons with high levels integrated complexity. Integrating nanophotonic functionality onto should then allow us to extend this level photons. Resulting nano-optoelectronic systems will inevitably create new functionality, which not only enables next-generation technologies like optical interconnects, but also gives rise yet unforeseen applications.Directly growing III-V nanomaterials on provides an advantageous pathway towards optoelectronic integration. Conventional wisdom often breaks at the nanoscale, traditional integration challenges lattice mismatch are circumvented. In particular, nanoneedles nanopillars attractive properties grow under conditions that compatible process constraints CMOS technology.This dissertation present a variety devices developed using nanoneedle nanopillar platform. Nanolasers demonstrated pumping, progress electrical injection is shown. Under reverse bias, enable avalanche photodiodes featuring gain-bandwidth products in excess 100 GHz. Nanopillar exhibit clear photovoltaic effects even support nonlinear generation. The breadth shown suggests powerful marriage between photons well within reach.