Negative Capacitance for Boosting Tunnel FET performance

作者: Masaharu Kobayashi , Kyungmin Jang , Nozomu Ueyama , Toshiro Hiramoto

DOI: 10.1109/TNANO.2017.2658688

关键词:

摘要: … Now by combining tunnel FET and NCFET, a hybrid device structure is proposed in Fig. 3. The channel structure is adopted from the vertical TFET, where PIN diode is formed on SOI …

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