Improvement in ferroelectricity of Hf x Zr1− x O2 thin films using ZrO2 seed layer
作者： Takashi Onaya , Toshihide Nabatame , Naomi Sawamoto , Akihiko Ohi , Naoki Ikeda
关键词: Grain growth 、 Ferroelectricity 、 Nucleation 、 Thin film 、 Analytical chemistry 、 Amorphous solid 、 Capacitor 、 Materials science
摘要: The effect of crystallized ZrO2 (ZrO2-seed), amorphous Hf0.43Zr0.57O2 (HZO; HZO-seed), and Al2O3 (Al2O3-seed) seed layers on the ferroelectricity HZO films was investigated. remanent polarization () a TiN-electroded capacitor with ZrO2-seed layer much larger than that capacitors HZO-seed, Al2O3-seed, or no layer. Furthermore, maximum 2P r exhibited when thickness 2 nm. Large grain growth observed, which satisfied same lattice pattern between films, indicates plays an important role in nucleation film.
harvard.edu
elsevier.com
sci-hub.se 参考文章(50)
Patrick Polakowski, Johannes Müller, Ferroelectricity in undoped hafnium oxide Applied Physics Letters. ,vol. 106, pp. 232905- ,(2015) , 10.1063/1.4922272
Dayu Zhou, Yan Guan, Melvin M. Vopson, Jin Xu, Hailong Liang, Fei Cao, Xianlin Dong, Johannes Mueller, Tony Schenk, Uwe Schroeder, Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films Acta Materialia. ,vol. 99, pp. 240- 246 ,(2015) , 10.1016/J.ACTAMAT.2015.07.035
Ran Jiang, Zhengran Wu, Xianghao Du, Zuyin Han, Weideng Sun, Ferroelectric-field-effect-enhanced resistance performance of TiN/Si:HfO2/oxygen-deficient HfO2/TiN resistive switching memory cells Applied Physics Letters. ,vol. 107, pp. 013502- ,(2015) , 10.1063/1.4926505
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woojin Jeon, Taehwan Moon, Cheol Seong Hwang, Ferroelectric properties and switching endurance of Hf0.5Zr0.5O2films on TiN bottom and TiN or RuO2top electrodes physica status solidi (RRL) - Rapid Research Letters. ,vol. 8, pp. 532- 535 ,(2014) , 10.1002/PSSR.201409017
Min Hung Lee, Y.-T Wei, C. Liu, J.-J Huang, Ming Tang, Yu-Lun Chueh, K.-Y Chu, Miin-Jang Chen, Heng-Yuan Lee, Yu-Sheng Chen, Li-Heng Lee, Ming-Jinn Tsai, Ferroelectricity of HfZrO 2 in Energy Landscape With Surface Potential Gain for Low-Power Steep-Slope Transistors IEEE Journal of the Electron Devices Society. ,vol. 3, pp. 377- 381 ,(2015) , 10.1109/JEDS.2015.2435492
T. S. Böscke, J. Müller, D. Bräuhaus, U. Schröder, U. Böttger, Ferroelectricity in hafnium oxide thin films Applied Physics Letters. ,vol. 99, pp. 102903- ,(2011) , 10.1063/1.3634052
M. Hoffmann, U. Schroeder, T. Schenk, T. Shimizu, H. Funakubo, O. Sakata, D. Pohl, M. Drescher, C. Adelmann, R. Materlik, A. Kersch, T. Mikolajick, Stabilizing the ferroelectric phase in doped hafnium oxide Journal of Applied Physics. ,vol. 118, pp. 072006- ,(2015) , 10.1063/1.4927805
Min Hyuk Park, Han Joon Kim, Yu Jin Kim, Woongkyu Lee, Taehwan Moon, Keum Do Kim, Cheol Seong Hwang, Study on the degradation mechanism of the ferroelectric properties of thin Hf0.5Zr0.5O2 films on TiN and Ir electrodes Applied Physics Letters. ,vol. 105, pp. 072902- ,(2014) , 10.1063/1.4893376
T. S. Böscke, St. Teichert, D. Bräuhaus, J. Müller, U. Schröder, U. Böttger, T. Mikolajick, Phase transitions in ferroelectric silicon doped hafnium oxide Applied Physics Letters. ,vol. 99, pp. 112904- ,(2011) , 10.1063/1.3636434
Uwe Schroeder, Ekaterina Yurchuk, Johannes Müller, Dominik Martin, Tony Schenk, Patrick Polakowski, Christoph Adelmann, Mihaela I. Popovici, Sergei V. Kalinin, Thomas Mikolajick, Impact of different dopants on the switching properties of ferroelectric hafniumoxide Japanese Journal of Applied Physics. ,vol. 53, ,(2014) , 10.7567/JJAP.53.08LE02