Electric field and temperature scaling of polarization reversal in silicon doped hafnium oxide ferroelectric thin films
作者： Dayu Zhou , Yan Guan , Melvin M. Vopson , Jin Xu , Hailong Liang
DOI: 10.1016/J.ACTAMAT.2015.07.035
关键词:
摘要: HfO 2-based binary lead-free ferroelectrics show promising properties for non-volatile memory applications, providing that their polarization reversal behavior is fully understood. In this work, temperature-dependent polarization hysteresis measured over a wide applied field range has been investigated for Si-doped HfO 2 ferroelectric thin films. Our study indicates that in the low and medium electric field regimes (E< twofold coercive field, 2E c), the reversal process is dominated by the thermal activation on domain wall motion and …
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