作者: Min Shi , Liexiang Xie , Ruzhong Zuo , Yudong Xu , Cang Gu
DOI: 10.1007/S10854-016-5017-0
关键词:
摘要: Lead-free films of Ba0.9Ca0.1TiO3 (BCT) were prepared on the Pt/Ti/SiO2/Si substrate via sol–gel method under three different annealing processes. The processes contain only BCT phase and from without impurity phases. Under complete process (CAP), possess best crystallinity, typical grain dense structures, most flat surface, uniform film thicknesses. root-mean-square roughness CAP is 1.94 nm. possesses largest remanent polarization dielectric constant, smallest coercive field loss. These results indicate that, among processes, for preparing with ferroelectric properties.