Ferroelectric domain structures of epitaxial CaBi2Nb2O9 thin films on single crystalline Nb doped (100) SrTiO3 substrates
作者： Yoonho Ahn , Jeong Dae Seo , Jong Yeog Son
DOI: 10.1016/J.JCRYSGRO.2015.04.020
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摘要: Abstract Epitaxial CaBi 2 Nb O 9 (CBNO) thin films were deposited on Nb-doped SrTiO 3 substrates. The CBNO as a lead-free ferroelectric material exhibit good property with the remanent polarization of 10.6 μC/cm . In fatigue resistance test, have no degradation in up to 1×10 12 switching cycles, which is applicable for non-volatile random access memories (FeRAMs). Furthermore, piezoresponse force microscopy study (PFM) reveals that larger domain structures than those PbTiO films. From Landau, Lifshiftz, and Kittel׳s scaling law, it inferred wall energy probably very similar
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