Ferroelectric and dielectric properties of sol-gel derived BaxSr1-xTiO3 thin films
作者： S.U Adikary , H.L.W Chan
DOI: 10.1016/S0040-6090(02)00918-5
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摘要: Ferroelectric thin films of Ba 0.7 Sr 0.3 TiO 3 , 0.8 0.2 0.9 0.1 and BaTiO were fabricated by a modified sol-gel technique on Pt/Ti/SiO 2 /Si substrates. All the compositions crystallized in perovskite structure consist well-defined grains. As value x increases grain size 1-x while dielectric permittivity decreases. composition possesses highest 748 (at 100 kHz). Hysteresis loops measured at room temperature for all showed that has largest remnant polarization 4.8 μC/cm . The ferroelectric properties derived BaxSr are strongly dependent content grain.
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