Synthesis and microstructural characterization of Bi12SiO20 (BSO) thin films produced by the sol-gel process
作者： Asja Veber , Špela Kunej , Danilo Suvorov
DOI: 10.1016/J.CERAMINT.2009.07.024
关键词:
摘要: Abstract We have produced Bi 12 SiO 20 (BSO) thin films using the sol–gel process. The stable sol was synthesized Bi(NO 3 ) ·5H 2 O and Si(OC H 5 4 (TEOS) as precursors, acetic acid 2-ethoxyethanol solvents, ethanolamine stabilizer. stability of solution, which depends on concentration R h value ( = [H O]/[M]), directly affects microstructure BSO film. determined that optimal for preparation is 0.76 M. influences substrates, annealing temperature, = value solution were investigated. X-ray diffraction (XRD) showed starts to form at 500 °C single-phase polycrystalline are formed 700 °C. coated characterized by means (XRD), scanning electron microscopy (SEM) atomic force (AFM).
elsevier.com
sci-hub.se 参考文章(20)
M. Jain, A. K. Tripathi, T. C. Goel, P. K. C. Pillai, Preparation and Characterization of Bismuth Silicate (BSO) Thin Film by the Sol–Gel Technique Journal of Materials Science Letters. ,vol. 18, pp. 479- 481 ,(1999) , 10.1023/A:1006698515815
C. Jeffrey Brinker, George W. Scherer, Sol-Gel Science: The Physics and Chemistry of Sol-Gel Processing ,(1990)
J.C. Alonso, R. Diamant, E. Haro-Poniatowski, M. Fernández-Guasti, G. Muñoz, I. Camarillo, M. Jouanne, J.F. Morhange, Raman characterization of Bi12SiO20 thin films obtained by pulsed laser deposition Applied Surface Science. ,vol. 109, pp. 359- 361 ,(1997) , 10.1016/S0169-4332(96)00674-5
A. V. Prasadarao, U. Selvaraj, S. Komarneni, A. S. Bhalla, Fabrication of La2Ti2O7 thin films by a sol-gel technique Ferroelectrics Letters Section. ,vol. 14, pp. 65- 72 ,(1992) , 10.1080/07315179208203344
R. E. Aldrich, S. L. Hou, M. L. Harvill, Electrical and Optical Properties of Bi12SiO20 Journal of Applied Physics. ,vol. 42, pp. 493- 494 ,(1971) , 10.1063/1.1659638
S. Madeswaran, N.V. Giridharan, R. Jayavel, Sol–gel synthesis and property studies of layered perovskite bismuth titanate thin films Materials Chemistry and Physics. ,vol. 80, pp. 23- 28 ,(2003) , 10.1016/S0254-0584(02)00489-3
S.U Adikary, H.L.W Chan, Ferroelectric and dielectric properties of sol-gel derived BaxSr1-xTiO3 thin films Thin Solid Films. ,vol. 424, pp. 70- 74 ,(2003) , 10.1016/S0040-6090(02)00918-5
T. Okada, F. Yahiro, H. Uetsuhara, Y. Nakata, M. Maeda, S. Higuchi, K. Ueda, Deposition of highly oriented Bi12SiO20 thin films on Y-Stabilized Zirconia and SiO2 by Pulsed-Laser Deposition Applied Physics A. ,vol. 69, pp. 723- 726 ,(1999) , 10.1007/S003390051515
Dong Soo Paik, A. V. Prasada Rao, S. Komarneni, Sol-gel fabrication of oriented PZT thin films: Effect of buffer layer in promoting epitaxial growth Ferroelectrics. ,vol. 211, pp. 141- 151 ,(1998) , 10.1080/00150199808232339
Sannian Song, Jiwei Zhai, Xi Yao, Effects of buffer layer on the dielectric properties of BaTiO3 thin films prepared by sol–gel processing Materials Science and Engineering B-advanced Functional Solid-state Materials. ,vol. 145, pp. 28- 33 ,(2007) , 10.1016/J.MSEB.2007.09.045