Sol-gel fabrication of oriented PZT thin films: Effect of buffer layer in promoting epitaxial growth
作者： Dong Soo Paik , A. V. Prasada Rao , S. Komarneni
DOI: 10.1080/00150199808232339
关键词: Coercivity 、 Silicon 、 Materials science 、 Epitaxy 、 Sol-gel 、 Chemical engineering 、 Thin film 、 Ferroelectricity 、 Buffer (optical fiber) 、 Platinum
摘要: Abstract Pb(Zr0.52Ti0.48)O3 (PZT) thin films were deposited onto platinum coated silicon substrates with and without PbTiO3 (PT) buffer layers. PZT on pure Pt Si (100) showed (110) orientations 100 to 80 intensity while these the same substrate an intermediate PT layer preferred orientation. The seems promote epitaxial growth. Increase in thickness of resulted lowering rcmanent polarization increase coercive field parameters.
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