作者: J.C. Alonso , R. Diamant , E. Haro-Poniatowski , M. Fernández-Guasti , G. Muñoz
DOI: 10.1016/S0169-4332(96)00674-5
关键词: Raman spectroscopy 、 Pulsed laser deposition 、 Oxygen delivery 、 Oxygen 、 Spectral line 、 Thin film 、 Analytical chemistry 、 Bismuth 、 Materials science 、 Characterization (materials science)
摘要: The synthesis by pulsed laser deposition and characterization Raman spectroscopy of Bi12SiO20 thin films are presented. spectra the close to their crystalline counterpart only in presence an oxygen flow during growth. In absence oxygen, observed similar that pure bismuth material.