Phase transitions in ferroelectric silicon doped hafnium oxide
作者： T. S. Böscke , St. Teichert , D. Bräuhaus , J. Müller , U. Schröder
DOI: 10.1063/1.3636434
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摘要: We investigated phase transitions in ferroelectric silicon doped hafnium oxide (FE-Si: HfO2) by temperature dependent polarization and x-ray diffraction measurements. If heated under mechanical confinement, the orthorhombic ferroelectric phase reversibly transforms into a phase with antiferroelectric behavior. Without confinement, a transformation into a monoclinic/tetragonal phase mixture is observed during cooling. These results suggest the existence of a common higher symmetry parent phase to the orthorhombic and monoclinic …
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