Dielectric constant enhancement due to Si incorporation into HfO2
作者： Kazuyuki Tomida , Koji Kita , Akira Toriumi
DOI: 10.1063/1.2355471
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摘要: The authors investigated the dielectric constant change of Hf(1−x)SixO2 film as functions Si concentration and annealing temperature. As a result, was increased when doped with small amount after 800°C annealing. revealed that enhancement films is related to phase transformation from monoclinic tetragonal HfO2. By using Clausius-Mossotti relation, it concluded through structural derived molar volume shrinkage rather than polarizability increase.
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